Preparation and Characterization of MOS Device using MgO Film as A Dielectric Material
In the present work, fabrication and characterization of Al/MgO/Si MOSdevice has been carried out using PLD as a deposition technique, and forcomparison Al/SiO2/Si MOS device has been also constructed.The obtainedresult show that , The Electrical and photovoltaic characteristics of MOS device are strongly dependent on Nesting Coffee Table (Set of 2